Manufacturing method of a light-emitting device having a patterned substrate

ABSTRACT

A manufacturing method of a light-emitting diode device. The light-emitting diode device comprises: a substrate ( 1 ); an epitaxial layer at one side of the substrate ( 1 ) and comprising an N-type layer ( 2 ), a P-type layer ( 4 ), and an active layer ( 3 ) between the N-type layer ( 2 ) and the P-type layer ( 4 ); an N-type electrode ( 5 ); a P-type electrode ( 7 ); an adhesive layer ( 8 ); and a patterned substrate ( 9 ). The light-emitting diode device further comprises an insulating layer ( 6 ) between the N-type electrode ( 5 ) and the P-type electrode ( 7 ), the insulating layer ( 6 ) electrically insulating the N-type electrode ( 5 ) and the P-type electrode ( 7 ). In the manufacturing method thereof, light-emitting efficiency and luminous efficiency of the light-emitting diode device can be improved, wiring is easier as compared with conventional chips, and the manufacturing process can be optimized.

FIELD OF THE INVENTION

The present disclosure relates to a Light-Emitting Diode (LED) deviceand a manufacturing method thereof, and in particularly to a high powerLight-Emitting Diode device with an improved light efficiency and amanufacturing method thereof.

BACKGROUND OF THE INVENTION

A Light-Emitting Diode device is a well-known solid state lightingelement, which emits light once if a voltage is applied thereto. TheLight-Emitting Diode device generally includes a diode region (which isusually called as an epitaxial layer) which includes an N-type layer, aP-type layer and a P-N junction, where an anode contact is in ohmiccontact with the P-type layer and a cathode contact is in ohmic contactwith the N-type layer. Typically, the diode region, i.e. the epitaxiallayer, may be formed epitaxially on a substrate and the epitaxial layeris generally made of gallium nitride-based material. Moreover, asapphire is typically chosen as a substrate for growth of the epitaxiallayer due to the restriction by a crystal structure and growthconditions of gallium nitride.

However, there exist the following problems in the technical solutionsof the prior art. Due to the poor thermal conductivity and electricalconductivity of the sapphire, the Light-Emitting Diode device made ofthe gallium nitride-based material has a poor heat dissipation property,a short lifespan and a complicated manufacturing process, thus limitingthe application of the sapphire in high power (i.e., high brightness)Light-Emitting Diodes. Furthermore, for a gallium nitride-basedLight-Emitting Diode (GaN-based LED) device having a structure with ahorizontal formal electrode, a P-type electrode will block light, thusthe P-type electrode is required to have a good ITO extension layer,resulting in a low light efficiency and a complicated manufacturingprocess of the GaN-based LED device.

In order to solve the above problems, one of the existing improvedsolutions adopts silicon carbide (SiC) as a substrate and utilizes astructure with electrodes one above the other. However, although theimproved solution effectively solves the above problems of heatdissipation and light blocking, silicon carbide is difficult to processand is even more costly than the sapphire, thereby restricting theapplication and promotion of the improved solution.

Further, another one of the existing improved solutions adopts acombination of a bonding technology and a peel-off technology, thus theepitaxial layer of the gallium nitride-based Light-Emitting Diode deviceis transferred to other substrate with high electrical conductivity andhigh thermal conductivity (which is for example made of an alloymaterial based on silicon (Si), copper (Cu) and aluminum (Al)). Thisimproved solution eliminates the adverse effects of the sapphiresubstrate on the gallium nitride-base Light-Emitting Diode device.However, since a bonding substrate has a low light reflectivity, areflective metallic layer must be deposited beyond an ITO extensionlayer of an LED chip in order to improve the light extractionefficiency. However, due to the use of the reflective metallic layer andthe bonding technology, the another one of the existing improvedsolutions is defective in that: process difficulty and costs areincreased, a chip of a structure with formal electrodes cannot be usedfor manufacturing the Light-Emitting Diode device, an electrode in thelight emitting surface blocks light to be emitted so that the lightextraction efficiency is reduced, and the wiring for the LED chip isdifficult.

Therefore, there exists a need to provide a Light-Emitting Diode device(especially a high power Light-Emitting Diode device) with an improvedlight efficiency and an improved electrode structure and a manufacturingmethod thereof.

SUMMARY OF THE INVENTION

In order to solve the above problems existing in the solutions of theprior art, the present disclosure provides a Light-Emitting Diode deviceand a manufacturing method thereof

The present disclosure includes the following technical solutions.

A Light-Emitting Diode device includes:

a substrate;

an epitaxial layer arranged at one side of the substrate, where theepitaxial layer includes an N-type layer, a P-type layer, and an activelayer between the N-type layer and the P-type layer;

an N-type electrode, which is in ohmic contact with one side of theN-type layer that is away from the substrate;

a P-type electrode, which is in ohmic contact with one side of theP-type layer that is away from the substrate;

an adhesive layer, one side of which is electrically glued to both oneside of the N-type electrode that is away from the N-type layer and oneside of the P-type electrode that is away from the P-type layer; and

a patterned substrate electrically glued to the other side of theadhesive layer;

where the Light-Emitting Diode device further includes an insulatinglayer between the N-type electrode and the P-type electrode, with theN-type electrode and the P-type electrode being electrically insulatedby the insulating layer.

In the above disclosed solution, preferably, the substrate is a sapphiresubstrate.

In the above disclosed solution, preferably, the N-type layer is made ofN-type gallium nitride.

In the above disclosed solution, preferably, the P-type layer is made ofP-type gallium nitride.

In the above disclosed solution, preferably, the N-type electrode has athickness in a range of 500 nm to 2 μm.

In the above disclosed solution, preferably, the P-type electrode has athickness in a range of 500 nm to 2 μm.

In the above disclosed solution, preferably, the insulating layer has athickness in a range of 50 nm to 500 nm.

In the above disclosed solution, preferably, the N-type electrode has agrid shape.

In the above disclosed solution, preferably, the P-type electrode iswithin each grid unit of the grid-shaped N-type electrode, and theP-type electrode and the N-type electrode are electrically insulated bythe insulating layer.

In the above disclosed solution, preferably, the Light-Emitting Diodedevice further includes at least one bonding pad for an external leadwire, and the bonding pad is situated on the patterned substrate.

In the above disclosed solution, preferably, the patterned substrate isbonded to the P-type electrode and the N-type electrode through theadhesive layer.

The present disclosure also discloses the following technical solutions.

A method for manufacturing a Light-Emitting Diode device, includingsteps of:

(A1) forming an epitaxial layer on a substrate;

(A2) forming an N-type electrode, an insulating layer and a P-typeelectrode on one side of the epitaxial layer, where the N-type electrodeand the P-type electrode are insulated electrically by the insulatinglayer; and

(A3) bonding a patterned substrate to the N-type electrode and theP-type electrode through an adhesive layer formed on the patternedsubstrate.

In the above disclosed solution, preferably, the step (A1) furtherincludes:

(B1) cleaning the substrate on which an epitaxial structure has beengrown in standard solution; and

(B2) etching the substrate on which the epitaxial structure has beengrown by an ICP etching process to form the epitaxial layer, whichincludes an N-type layer, an active layer and a P-type layer.

In the above disclosed solution, preferably, the step (A2) furtherincludes:

(C1) depositing the N-type electrode onto the N-type layer and formingan ohmic contact between the N-type electrode and the N-type layer;

(C2) depositing insulating material on the epitaxial layer to form theinsulating layer;

(C3) etching a portion of the insulating layer on a surface of theP-type layer using a corrosive liquid to expose the P-type layer; and

(C4) depositing the P-type electrode to the exposed P-type layer andforming an ohmic contact between the P-type electrode and the exposedP-type layer.

In the above disclosed solution, preferably, the step (A3) furtherincludes:

(D1) patterning a surface metallic conductive layer on the substrate byusing a corrosive liquid to form the adhesive layer;

(D2) applying a heterogenic conductive adhesive on the patternedsubstrate to form the adhesive layer; and

(D3) bonding the patterned substrate to the N-type electrode and theP-type electrode by the adhesive layer through adopting a fliptechnology.

In the above disclosed solution, preferably, the substrate is a sapphiresubstrate.

In the above disclosed solution, preferably, the N-type layer is made ofN-type gallium nitride.

In the above disclosed solution, preferably, the P-type layer is made ofP-type gallium nitride.

In the above disclosed solution, preferably, the N-type electrode has athickness in a range of 500 nm to 2 μm.

In the above disclosed solution, preferably, the P-type electrode has athickness in a range of 500 nm to 2 μm.

In the above disclosed solution, preferably, the insulating layer has athickness in a range of 50 nm to 500 nm.

In the above disclosed solution, preferably, the N-type electrode has agrid shape.

In the above disclosed solution, preferably, the P-type electrode iswithin each grid unit of the grid-shaped N-type electrode, and theP-type electrode and the N-type electrode are electrically insulated bythe insulating layer.

In the above disclosed solution, preferably, the patterned substrateincludes at least one bonding pad for an external lead wire, and thebonding pad is arranged on the patterned substrate.

In the above disclosed solution, preferably, the patterned substrate isbonded to the P-type electrode and the N-type electrode through theadhesive layer.

The Light-Emitting Diode device and the manufacturing method thereofdisclosed by the present disclosure have the following advantages: (1)the use of the mirror-treated P-type electrode with high lightreflectivity as the reflective layer improves the luminous efficiency ofthe Light-Emitting Diode device; (2) since the N-type electrode has thegrid shape and the P-type electrode is within each grid unit of thegrid-shaped N-type electrode, a wiring electrode of a big area can beomitted, thereby improving the light extraction efficiency; (3) sincethe bonding pad is located on the patterned substrate rather than on theLED chip, the wiring for the bonding pad is easier than the conventionalwiring on the chip; (4) since the P-type electrode with a big area andhigh light reflectivity is used, an additional extension layer (e.g., anITO layer, a ZnO layer, etc.) can be eliminated, thereby optimizing themanufacturing process; and (5) a distributed structure of the P-typeelectrode and the N-type electrode is advantageous for the extension ofthe current in the P-type gallium nitride, thereby improving an externalquantum efficiency and increasing the light efficiency.

BRIEF DESCRIPTION OF THE DRAWINGS

Technical features and advantages of the present disclosure will be wellunderstood by the skilled person in the art with reference to theaccompanying drawings, among which:

FIG. 1 is a schematic cross-sectional view of a Light-Emitting Diodedevice according to an embodiment of the present invention;

FIG. 2 is a schematic plan view of the Light-Emitting Diode deviceaccording to the embodiment of the present invention; and

FIG. 3 is a flow chart of a method for manufacturing the Light-EmittingDiode device according to an embodiment of the present invention.

DETAILED DESCRIPTION OF THE EMBODIMENTS

FIG. 1 is a schematic cross-sectional view of a Light-Emitting Diodedevice according to an embodiment of the present invention. As shown inFIG. 1, the Light-Emitting Diode device disclosed by the presentdisclosure includes: a substrate 1; an epitaxial layer located on oneside of the substrate 1, where the epitaxial layer includes an N-typelayer 2, a P-type layer 4, and an active layer 3 between the N-typelayer and the P-type layer; an N-type electrode 5, which is in ohmiccontact with one side of the N-type layer that is away from thesubstrate; a P-type electrode 7, which is in ohmic contact with one sideof the P-type layer that is away from the substrate; an adhesive layer8, one side of which is electrically adhered to both one side of theN-type electrode 5 that is away from the N-type layer 2 and one side ofthe P-type electrode 7 that is away from the P-type layer 4; and apatterned substrate 9 electrically adhered to the other side of theadhesive layer 8. The Light-Emitting Diode device further includes aninsulating layer 6 between the N-type electrode 5 and the P-typeelectrode 7, with the N-type electrode 5 and the P-type electrode 7being electrically insulated by the insulating layer 6.

Preferably, in the Light-Emitting Diode device disclosed by the presentdisclosure, the substrate 1 is a sapphire substrate (which has highlight transmittance).

Preferably, in the Light-Emitting Diode device disclosed by the presentdisclosure, the N-type layer 2 is made of N-type gallium nitride.

Preferably, in the Light-Emitting Diode device disclosed by the presentdisclosure, the P-type layer 4 is made of P-type gallium nitride.

Preferably, in the Light-Emitting Diode device disclosed by the presentdisclosure, the active layer is a multiple quantum well active layer.

Preferably, in the Light-Emitting Diode device disclosed by the presentdisclosure, the N-type electrode 5 may be made of any one or more from agroup including: a Ni/Ag alloy (i.e. a nickel/silver alloy), a Ni/Aualloy (i.e. a nickel/aurum alloy), a Ti/Au alloy (i.e. titanium/aurumalloy), a Ti/Al/Ti/Au alloy (i.e. titanium/aluminum/titanium/aurumalloy) and a Cr/Pt/Au alloy (i.e. chromium/platinum/aurum alloy). Forexample, the Ni/Ag alloy includes a nickel layer and a silver layer, andthe like.

Preferably, in the Light-Emitting Diode device disclosed by the presentdisclosure, the P-type electrode 7 may be made of any one or more from agroup including: a Ni/Ag alloy, a Ni/Au alloy, a Ti/Au alloy, aTi/Al/Ti/Au alloy and a Cr/Pt/Au alloy. For example, the Ni/Ag alloyincludes a nickel layer and a silver layer, and the like. In addition,the P-type electrode 7 has high light reflectivity.

Preferably, in the Light-Emitting Diode device disclosed by the presentdisclosure, the insulating layer is made of silicon dioxide (SiO₂),silicon nitride (SiN) or silicon oxynitride (SiON). In addition, theinsulating layer has high light transmittance.

Preferably, in the Light-Emitting Diode device disclosed by the presentdisclosure, the adhesive layer 8 is a heterogenic conductive adhesivewhich has high thermal conductivity and high electrical conductivity.

Preferably, in the Light-Emitting Diode device disclosed by the presentdisclosure, the patterned substrate 9 has a surface metallic conductivelayer and has high thermal conductivity and high electricalconductivity.

Preferably, in the Light-Emitting Diode device disclosed by the presentdisclosure, the N-type electrode 5 has a thickness in a range of 500 nmto 2 μm.

Preferably, in the Light-Emitting Diode device disclosed by the presentdisclosure, the P-type electrode 7 has a thickness in a range of 500 nmto 2 μm.

Preferably, in the Light-Emitting Diode device disclosed by the presentdisclosure, the insulating layer has a thickness in a range of 50 nm to500 nm.

FIG. 2 is a schematic plan view of the Light-Emitting Diode deviceaccording to the embodiment of the present disclosure. As shown in FIGS.1 and 2, preferably, in the Light-Emitting Diode device disclosed by thepresent disclosure, the N-type electrode 5 has a grid shape.

As shown in FIGS. 1-2, preferably, in the Light-Emitting Diode devicedisclosed by the present disclosure, the P-type electrode 7 is withineach grid unit of the grid-shaped N-type electrode 5 (where the P-typeelectrode 7 and the N-type electrode 5 are electrically insulated by theinsulating layer 6).

As shown in FIG. 2, preferably, the Light-Emitting Diode devicedisclosed by the present disclosure further includes at least onebonding pad 10 for an external lead wire (illustratively, in theembodiment shown in FIG. 2, the Light-Emitting Diode device includes twobonding pads), and the bonding pad 10 is arranged on the patternedsubstrate 9.

As shown in FIGS. 1-2, preferably, in the Light-Emitting Diode devicedisclosed by the present disclosure, the patterned substrate 9 is bondedto the P-type electrode 7 and the N-type electrode 5 through theadhesive layer 8.

As can be seen from the above, since the mirror-treated P-type electrode7 with high light reflectivity is used as the reflective layer, theluminous efficiency of the Light-Emitting Diode device is improved. Inaddition, due to the adoption of such a structure in which the N-typeelectrode 5 is grid-shaped and the P-type electrode 7 is within eachgrid unit of the grid-shaped N-type electrode 5, a wiring electrode of abig area can be omitted, thereby improving the light extractionefficiency. Furthermore, the wiring is made through the bonding pad 10arranged on the patterned substrate 9 after the patterned substrate 9 isbonded (that is, the bonding pad 10 is located on the patternedsubstrate 9 rather than on the LED chip), and hence is much easier thanthe conventional wiring on the chip.

FIG. 3 is a flow chart of a method for manufacturing the Light-EmittingDiode device according to an embodiment of the present disclosure. Asshown in FIG. 3, the method for manufacturing the Light-Emitting Diodedevice disclosed by the present disclosure includes the following stepsof: (A1) forming an epitaxial layer on a substrate; (A2) forming anN-type electrode, an insulating layer and a P-type electrode on one sideof the epitaxial layer, where the N-type electrode and the P-typeelectrode are insulated electrically by the insulating layer; and (A3)bonding a patterned substrate to the N-type electrode and the P-typeelectrode through an adhesive layer formed on the patterned substrate.

As shown in FIG. 3, in the method for manufacturing the Light-EmittingDiode device disclosed by the present disclosure, the step (A1) furtherincludes: (B1) cleaning the substrate on which the epitaxial structurehas been grown in a standard solution; and (B2) etching the substrate onwhich the epitaxial structure has been grown using an InductivelyCoupled Plasma (ICP) etching process to form an epitaxial layer, whichincludes an N-type layer, an active layer and a P-type layer.

As shown in FIG. 3, in the method for manufacturing the Light-EmittingDiode device disclosed by the present disclosure, the step (A2) furtherincludes: (C1) depositing the N-type electrode onto the N-type layer andforming an ohmic contact between the N-type electrode and the N-typelayer; (C2) depositing insulating material on the epitaxial layer toform the insulating layer; (C3) etching a portion of the insulatinglayer on the surface of the P-type layer using a corrosive liquid toexpose the P-type layer; and (C4) depositing the P-type electrode ontothe exposed P-type layer and forming an ohmic contact between the P-typelayer and the exposed P-type layer.

As shown in FIG. 3, in the method for manufacturing the Light-EmittingDiode device disclosed by the present disclosure, the step (A3) furtherincludes: (D1) patterning a surface metallic conductive layer on thesubstrate to form the patterned substrate; (D2) applying a heterogenicconductive adhesive on the patterned substrate to form the adhesivelayer; and (D3) bonding the patterned substrate to the N-type electrodeand the P-type electrode by the adhesive layer through a fliptechnology.

Preferably, in the method for manufacturing the Light-Emitting Diodedevice disclosed by the present disclosure, the substrate is a sapphiresubstrate (which has high light transmittance).

Preferably, in the method for manufacturing the Light-Emitting Diodedevice disclosed by the present disclosure, the N-type layer is made ofN-type gallium nitride.

Preferably, in the method for manufacturing the Light-Emitting Diodedevice disclosed by the present disclosure, the P-type layer is made ofP-type gallium nitride.

Preferably, in the method for manufacturing the Light-Emitting Diodedevice disclosed by the present disclosure, the active layer is amultiple quantum well active layer.

Preferably, in the method for manufacturing the Light-Emitting Diodedevice disclosed by the present disclosure, the N-type electrode may bemade of any one or more from a group including: a Ni/Ag alloy, a Ni/Aualloy, a Ti/Au alloy, a Ti/Al/Ti/Au alloy and a Cr/Pt/Au alloy. Forexample, the Ni/Ag alloy includes a nickel layer and a silver layer, andthe like.

Preferably, in the method for manufacturing the Light-Emitting Diodedevice disclosed by the present disclosure, the P-type electrode may bemade of any one or more from a group including: a Ni/Ag alloy, a Ni/Aualloy, a Ti/Au alloy, a Ti/Al/Ti/Au alloy and a Cr/Pt/Au alloy. Forexample, the Ni/Ag alloy includes a nickel layer and a silver layer, andthe like. In addition, the P-type electrode 7 has high lightreflectivity.

Preferably, in the method for manufacturing the Light-Emitting Diodedevice disclosed by the present disclosure, the insulating layer is madeof SiO₂, SiN or SiON. In addition, the insulating layer has high lighttransmittance.

Preferably, in the method for manufacturing the Light-Emitting Diodedevice disclosed by the present disclosure, the adhesive layer has highthermal conductivity and high electrical conductivity.

Preferably, in the method for manufacturing the Light-Emitting Diodedevice disclosed by the present disclosure, the patterned substrate hashigh thermal conductivity and high electrical conductivity.

Preferably, in the method for manufacturing the Light-Emitting Diodedevice disclosed by the present disclosure, the N-type electrode has athickness in a range of 500 nm to 2 μm.

Preferably, in the method for manufacturing the Light-Emitting Diodedevice disclosed by the present disclosure, the P-type electrode has athickness in a range of 500 nm to 2 μm.

Preferably, in the method for manufacturing the Light-Emitting Diodedevice disclosed by the present disclosure, the insulating layer has athickness in a range of 50 nm to 500 nm.

Preferably, in the method for manufacturing the Light-Emitting Diodedevice disclosed by the present disclosure, the N-type electrode has agrid shape.

Preferably, in the method for manufacturing the Light-Emitting Diodedevice disclosed by the present disclosure, the P-type electrode iswithin each grid unit of the grid-shaped N-type electrode (where theP-type electrode and the N-type electrode are electrically insulated bythe insulating layer).

Preferably, in the method for manufacturing the Light-Emitting Diodedevice disclosed by the present disclosure, the patterned substrateincludes at least one bonding pad 10 for an external lead wire(illustratively, two bonding pads), and the bonding pad 10 is arrangedon the patterned substrate.

Preferably, in the method for manufacturing the Light-Emitting Diodedevice disclosed by the present disclosure, the patterned substrate isbonded to the P-type electrode and the N-type electrode through theadhesive layer.

As such, the P-type electrode having a big area and high lightreflectivity is used, and therefore an additional extension layer (e.g.,an ITO layer, a ZnO layer, etc.) is eliminated, thereby optimizing themanufacturing process.

Although the present invention has been described with reference to thepreferred embodiments, the present invention is not limited to the aboveembodiments. It should be noted that various changes and modificationcan be made by the person skilled in the art without departing from thespirit and scope of the present invention.

1. A method for manufacturing a Light-Emitting Diode device, comprisingsteps of: (A1) forming an epitaxial layer on a substrate; (A2) formingan N-type electrode, an insulating layer and a P-type electrode on oneside of the epitaxial layer, wherein the N-type electrode and the P-typeelectrode are insulated electrically by the insulating layer; and (A3)bonding a patterned substrate to the N-type electrode and the P-typeelectrode through an adhesive layer formed on the patterned substrate.2. The method for manufacturing a Light-Emitting Diode device accordingto claim 1, wherein the step (A1) further comprises: (B1) cleaning thesubstrate on which an epitaxial structure has been grown in standardsolution; and (B2) etching the substrate on which the epitaxialstructure has been grown by an ICP etching process to form the epitaxiallayer, which comprises an N-type layer, an active layer and a P-typelayer.
 3. The method for manufacturing a Light-Emitting Diode deviceaccording to claim 2, wherein the step (A2) further comprises: (C1)depositing the N-type electrode onto the N-type layer and forming anohmic contact between the N-type electrode and the N-type layer; (C2)depositing insulating material on the epitaxial layer to form theinsulating layer; (C3) etching a portion of the insulating layer on asurface of the P-type layer using a corrosive liquid to expose theP-type layer; and (C4) depositing the P-type electrode to the exposedP-type layer and forming an ohmic contact between the P-type electrodeand the exposed P-type layer.
 4. The method for manufacturing aLight-Emitting Diode device according to claim 3, wherein the step (A3)further comprises: (D1) patterning a surface metallic conductive layeron the substrate by using a corrosive liquid to form the adhesive layer;(D2) applying a heterogenic conductive adhesive on the patternedsubstrate to form the adhesive layer; and (D3) bonding the patternedsubstrate to the N-type electrode and the P-type electrode by theadhesive layer through adopting a flip technology.
 5. The method formanufacturing a Light-Emitting Diode device according to claim 4,wherein the substrate is a sapphire substrate.
 6. The method formanufacturing a Light-Emitting Diode device according to claim 5,wherein the N-type layer is made of N-type gallium nitride.
 7. Themethod for manufacturing a Light-Emitting Diode device according toclaim 6, wherein the P-type layer is made of P-type gallium nitride. 8.The method for manufacturing a Light-Emitting Diode device according toclaim 7, wherein the N-type electrode has a thickness in a range of 500nm to 2 μm.
 9. The method for manufacturing a Light-Emitting Diodedevice according to claim 8, wherein the P-type electrode has athickness in a range of 500 nm to 2 μm.
 10. The method for manufacturinga Light-Emitting Diode device according to claim 9, wherein theinsulating layer has a thickness in a range of 50 nm to 500 nm.
 11. Themethod for manufacturing a Light-Emitting Diode device according toclaim 10, wherein the N-type electrode has a grid shape.
 12. The methodfor manufacturing a Light-Emitting Diode device according to claim 11,wherein the P-type electrode is within each grid unit of the grid-shapedN-type electrode, and the P-type electrode and the N-type electrode areelectrically insulated by the insulating layer.
 13. The method formanufacturing a Light-Emitting Diode device according to claim 12,wherein the patterned substrate includes at least one bonding pad for anexternal lead wire, and the bonding pad is arranged on the patternedsubstrate.
 14. The method for manufacturing a Light-Emitting Diodedevice according to claim 13, wherein the patterned substrate is bondedto the P-type electrode and the N-type electrode through the adhesivelayer.